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January 1997
NDS355AN
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT TM -3 N-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very small
outline surface mount package.
Features
1.7A, 30 V, R DS(ON) = 0.125 ? @ V GS = 4.5 V
R DS(ON) = 0.085 ? @ V GS = 10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOT TM -3 design for superior
thermal and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDS355AN
30
±20
Units
V
V
I D
Maximum Drain Current - Continuous
(Note 1a)
1.7
A
- Pulsed
10
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
NDS355AN Rev.C
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相关代理商/技术参数
NDS355AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355AN 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 30V 1.7A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 30V, 1.7A, SUPER SOT-3
NDS355AN_G 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3
NDS355AN_Q 功能描述:MOSFET N-Channel Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS355AN-CUT TAPE 制造商:FAIRCHILD 功能描述:N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3
NDS355N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS355N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET